IRF7807VD2PBF International Rectifier, IRF7807VD2PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7807VD2PBF
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807VD2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7807VD2PbF
6
100
0.1
10
0.00001
1
D = 0.50
Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
5
4
3
2
1
0
Fig 10. Typical Gate Charge Vs.
0
I =
D
Gate-to-Source Voltage
0.001
7.0A
t , Rectangular Pulse Duration (sec)
1
2
Q , Total Gate Charge (nC)
G
4
V
DS
= 16V
0.01
6
8
10
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
12
J
DM
x Z
1
thJA
P
2
DM
1
+ T
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A
t
1
t
2
10