IRF7321D2PBF International Rectifier, IRF7321D2PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7321D2PBF
• Description: MOSFET P-CH 30V 4.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7321D2PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 98 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 4.9 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 32 ns
• Gate Charge Qg: 23 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 13 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET Source-Drain Ratings and Characteristics
MOSFET Electrical Characteristics @ T
Schottky Diode Electrical Specifications
Schottky Diode Maximum Ratings
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
If (av)
I
Vfm
Irm
Ct
dv/dt
DSS
S
d(on)
d(off)
f
SM
r
rr
SM
fs
GS(th)
SD
(BR)DSS
oss
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
gd
iss
rss
g
gs
rr
2
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Forward voltage drop
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Parameter
Parameter
Parameter
Parameter
Min. Typ. Max. Units
Min. Typ. Max. Units
Max. Units
Max. Units
4900 V/µs
-1.0
–––
–––
––– -0.78 -1.0
–––
–––
0.57
0.77
0.52
0.79
0.30
––– 0.042 0.062
––– 0.076 0.098
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
200
310
3.2
2.0
20
37
J
= 25°C (unless otherwise specified)
–––
–––
–––
–––
710
380
180
–––
–––
––– -100
–––
7.7
3.8
5.9
44
42
23
13
13
34
32
pF
–––
–––
-1.0
–––
–––
–––
-2.5
–––
100
-25
5.7
8.9
-30
19
20
51
48
66
63
34
50% Duty Cycle. Rectangular Wave, Tc = 25°C
5µs sine or 3µs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C
Vr = 30V
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated Vr
See Fig.14
nC
nC
pF
ns
V
Ω
V
S
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
T
T
di/dt = 100A/µs ƒ
V
Conditions
D
D
Tj = 125°C
Tj = 25°C
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -4.9A
= -1.0A
= 25°C, I
= 25°C, I
= 15Ω, ƒ
= 6.0Ω
= 0V, I
= -10V, I
= V
= -15V, I
= -24V, V
= -24V, V
= -20V
= 20V
= -15V
= -10V, See Fig. 6 ƒ
= 0V
= -25V
= -4.5V, I
= -15V
Conditions
GS
Conditions
.
, I
D
S
F
D
= -250µA
D
D
Conditions
= -1.7A, V
= -1.7A
D
GS
GS
= -250µA
= -4.9A
= -4.9A
= -3.6A ƒ
= 0V
= 0V, T
Following any rated
with Vrrm applied
www.irf.com
GS
Tc = 70°C
J
ƒ
= 55°C
= 0V