IRF7321D2PBF International Rectifier, IRF7321D2PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7321D2PBF
• Description: MOSFET P-CH 30V 4.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7321D2PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 98 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 4.9 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 32 ns
• Gate Charge Qg: 23 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 13 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
0.1
10
0.00001
1
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
0.50
0.20
0.10
0.05
0.02
0.01
(THERMAL RESPONSE)
0.0001
V
SINGLE PULSE
10
GS
= -4.5V
0.001
Power Mosfet Characteristics
20
V
GS
t , Rectangular Pulse Duration (sec)
1
= -10V
0.01
30
A
0.16
0.12
0.08
0.04
0.00
0.1
0
1. Duty factor D = t / t
2. Peak T = P
Notes:
3
1
J
6
DM
x Z
1
thJA
P
2
9
DM
+ T
I
10
D
A
t
1
= -4.9A
t
2
12
5
100
15
A