IRF9317PBF International Rectifier, IRF9317PBF Datasheet

IRF9317PBF

Manufacturer Part Number

IRF9317PBF

Description

MOSFET P-CH 30V 16A SO-8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF9317TRPBF.pdf (8 pages)

Specifications of IRF9317PBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

6.6 mOhm @ 16A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

16A

Vgs(th) (max) @ Id

2.4V @ 50µA

Gate Charge (qg) @ Vgs

92nC @ 10V

Input Capacitance (ciss) @ Vds

2820pF @ 15V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

10.2 mOhms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 16 A

Power Dissipation

2.5 W

Mounting Style

SMD/SMT

Gate Charge Qg

31 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Applications

•

Features and Benefits

www.irf.com

Features

Notes through

Orderable part number

IRF9317PbF

IRF9317TRPbF

Industry-Standard SO8 Package

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Absolute Maximum Ratings

STG

@ T

= 25°C

= 70°C

= 25°C

= 70°C

(@V

(@T

DS(on) max

g (typical)

= 25°C)

= -4.5V)

= -10V)

†

are on page 2

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Package Type

10.2

-30

-16

6.6

Parameter

SO8

@ 10V

Tape and Reel

Tube/Bulk

Form

Standard Pack

-55 to + 150

HEXFET

Quantity

Resulting Benefits

Max.

Multi-Vendor Compatibility

Environmentally Friendlier

-130

0.02

IRF9317PbF

± 20

-30

-16

-13

2.5

1.6

4000

Power MOSFET

SO-8

Note

Units

W/°C

°C

3/5/10

Related parts for IRF9317PBF

IRF9317PBF Summary of contents

Page 1

... 6 -16 A Standard Pack Form SO8 Tube/Bulk SO8 Tape and Reel Parameter @ 10V GS @ 10V IRF9317PbF ® HEXFET Power MOSFET SO-8 Resulting Benefits Multi-Vendor Compatibility Environmentally Friendlier Note Quantity 95 4000 Max. Units -30 V ± 20 -16 -13 A -130 2.5 W 1.6 0.02 W/° ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R DS(on) Static Drain-to-Source On-Resistance V Gate Threshold Voltage GS(th) ΔV Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH Tj = 25°C 100 10 1 0.1 -2.3V 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25°C 1 0.1 ...

Page 4

150° 25° 0.1 0.3 0.4 0.5 0.6 0.7 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 1400 1200 1000 800 600 ...

Page 6

D D DUT 20K 1K Fig 18a. Gate Charge Test Circuit D.U DRIVER -20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ...

Page 7

Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER ...

Page 8

... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. ...

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