IRF9317PBF International Rectifier, IRF9317PBF Datasheet - Page 4

• Manufacturer Part Number: IRF9317PBF
• Description: MOSFET P-CH 30V 16A SO-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9317PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.6 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.4V @ 50µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2820pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10.2 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 16 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 31 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
1000
4
100
0.1
10
1
0.3
0.0001
20
15
10
Fig 9. Maximum Drain Current vs.
0.001
5
0
0.01
100
0.4
0.1
10
25
-V SD , Source-to-Drain Voltage (V)
1E-006
1
Ambient Temperature
0.5
T J = 150°C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
50
T A , Ambient Temperature (°C)
0.20
0.10
0.02
0.05
0.01
0.6
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
0.7
T J = 25°C
0.8
0.0001
V GS = 0V
100
0.9
125
0.001
1.0
t 1 , Rectangular Pulse Duration (sec)
150
0.01
Fig 10. Threshold Voltage vs. Temperature
1000
0.1
100
2.5
2.0
1.5
1.0
0.5
0.1
10
Fig 8. Maximum Safe Operating Area
1
-75 -50 -25
0.1
-V DS , Drain-to-Source Voltage (V)
1
DC
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
1
T A = 25°C
Tj = 150°C
Single Pulse
10
25
50
I D = -50µA
1msec
10msec
75 100 125 150
10
100
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1000
100