IRLU014NPBF International Rectifier, IRLU014NPBF Datasheet - Page 4

• Manufacturer Part Number: IRLU014NPBF
• Description: MOSFET N-CH 55V 10A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU014NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 265pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU014NPBF

4
100
0.1
10
500
400
300
200
100
1
0.2
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 175 C
C rss
C iss
C oss
Drain-to-Source Voltage
J
V
SD
V
DS
0.6
,Source-to-Drain Voltage (V)
°
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
=
=
=
=
T = 25 C
0V,
C
C
C
J
gs
gd
ds
1.0
+ C
+ C
10
°
f = 1MHz
gd ,
gd
C
ds
1.4
V
GS
SHORTED
= 0 V
1.8
100
1000
100
0.1
Fig 8. Maximum Safe Operating Area
10
15
10
1
5
0
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
6 A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
2
°
G
, Drain-to-Source Voltage (V)
4
BY R
10
DS(on)
FOR TEST CIRCUIT
6
SEE FIGURE
V
V
DS
DS
www.irf.com
= 44V
= 27V
8
10us
100us
1ms
10ms
13
100
10