IRLU014NPBF International Rectifier, IRLU014NPBF Datasheet - Page 5

• Manufacturer Part Number: IRLU014NPBF
• Description: MOSFET N-CH 55V 10A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU014NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 265pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU014NPBF

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10.0
8.0
6.0
4.0
2.0
0.0
0.1
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
Case Temperature
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
t , Rectangular Pulse Duration (sec)
°
1
150
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
1. Duty factor D = t / t
2. Peak T = P
t
Notes:
d(on)
t
J
r
≤ 0.1 %
≤ 1
DM
x Z
1
0.1
thJC
P
2
DM
+ T
t
d(off)
C
t
1
t
2
t
f
+
-
1
5