IRF6709S2TRPBF International Rectifier, IRF6709S2TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF6709S2TRPBF
• Description: MOSFET N-CH 25V 12A DIRECTFET-S1
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6709S2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1810pF @ 13V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric S1
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 21 W
• Gate Charge Qg: 8.1 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

…
‡
Notes:
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
DS(on)
GS(th)
G
iss
oss
rss
SD
g
Q
Q
Q
Q
sw
oss
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
g
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
25
19
1010
10.1
–––
-7.2
–––
–––
–––
–––
–––
340
140
–––
–––
–––
5.9
1.8
8.1
1.9
1.1
2.8
2.3
3.9
4.6
3.2
8.4
9.1
9.5
9.3
19
25
15
-100
13.5
2.35
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
7.8
1.0
1.0
12
26
23
14
mV/°C
mV/°C
mΩ
µA
nA
nC
nC
nC
pF
ns
ns
Ω
V
V
S
A
V
See Fig. 18
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
V
V
I
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 200A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
G
= 10A
= 10A
= 6.2Ω
= 25°C, I
= 25°C, I
= V
= 20V, V
= 20V, V
= 13V, I
= 13V
= 10V, V
= 13V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 13V, V
= 0V
GS
, I
D
Conditions
D
Conditions
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 10A, V
=10A
= 25µA
=10A
= 12A
= 10A
= 0V
= 0V, T
= 0V
= 4.5V
i
D
i
i
www.irf.com
GS
= 1mA
J
= 125°C
i
= 0V
i