IRFR3411PBF International Rectifier, IRFR3411PBF Datasheet

MOSFET N-CH 100V 32A DPAK

IRFR3411PBF

Manufacturer Part Number
IRFR3411PBF
Description
MOSFET N-CH 100V 32A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRFR3411PBF.pdf (10 pages)
2.IRFR3411PBF.pdf (4 pages)

Specifications of IRFR3411PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
44 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
71nC @ 10V
Input Capacitance (ciss) @ Vds
1960pF @ 25V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current, Drain
32 A
Gate Charge, Total
48 nC
Package Type
D-Pak (TO-252AA)
Polarization
N-Channel
Power Dissipation
130 W
Resistance, Drain To Source On
36 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
39 ns
Time, Turn-on Delay
11 ns
Transconductance, Forward
21 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
44 m Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
32 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
35 ns
Gate Charge Qg
48 nC
Minimum Operating Temperature
- 55 C
Rise Time
35 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFR3411PBF
l
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The
straight lead, I-Pak, version (IRFU series) is for through-
hole mounting applications. Power dissipation levels up
to 1.5 watts are possible in typical surface mount
applications.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AR
θJC
θJA
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
®
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Power MOSFETs from International
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
IRFR3411PbF
D-Pak
Typ.
300 (1.6mm from case )
–––
–––
–––
IRFR3411PbF
IRFU3411PbF
HEXFET
-55 to + 175
D
S
Max.
0.83
110
130
± 20
7.0
32
23
16
13
®
IRFU3411PbF
R
Power MOSFET
V
DS(on)
Max.
110
1.2
50
DSS
I-Pak
I
D
= 32A
PD - 95371B
= 100V
= 44mΩ
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1

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IRFR3411PBF Summary of contents

Page 1

... Junction-to-Case θJC R Junction-to-Ambient (PCB mount)* θJA R Junction-to-Ambient θJA www.irf.com G D-Pak IRFR3411PbF @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ 95371B IRFR3411PbF IRFU3411PbF ® HEXFET Power MOSFET 100V DSS R = 44mΩ DS(on 32A D S I-Pak IRFU3411PbF Max. Units 110 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

1MHz iss rss gd 2500 oss iss 2000 1500 1000 C oss 500 ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 ...

Page 6

D.U 20V 0.01 Ω Charge 6 400 15V DRIVER 300 + 200 A 100 V ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

EXAMPLE: THIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN THE ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" ssembly line position indicates "Lead-Free" qualification ...

Page 9

EXAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 2001 IN THE ASS EMB LY LINE "A" Note: "P" in ass embly line pos ition indicates Lead-Free" OR Notes: 1. ...

Page 10

NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO ...

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