IRFR3411PBF International Rectifier, IRFR3411PBF Datasheet - Page 2

• Manufacturer Part Number: IRFR3411PBF
• Description: MOSFET N-CH 100V 32A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3411PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 32 A
• Gate Charge, Total: 48 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 130 W
• Resistance, Drain To Source On: 36 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 44 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 35 ns
• Gate Charge Qg: 48 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR3411PBF

Source-Drain Ratings and Characteristics

‚
ƒ
„
Electrical Characteristics @ T
Notes:
I
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
E
I
I
V
t
Q
t
L
L
DSS
GSS
SM
d(on)
d(off)
S
rr
on
r
f
2
fs
D
S
(BR)DSS
GS(th)
AS
SD
DS(on)
iss
oss
rss
rr
g
gs
gd
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
I
R
T
(BR)DSS
max. junction temperature. (See fig. 11)
Starting T
SD
J
G
≤ 175°C.
≤ 16A di/d ≤ 340A/µs, V
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L =1.5mH
AS
= 16A. (See Figure 12)

Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚
…
†
recommended footprint dering techniques refer to application note
#AN-994.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 700… 185†
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
This is a typical value at device destruction and represents
This is a calculated value limited to T
–––
–––
–––
–––
–––
21
–––
operation outside rated limits.
Intrinsic turn-on time is negligible (turn-on is dominated by L
1960 –––
0.12
505
–––
–––
–––
–––
–––
–––
––– -100
250
–––
–––
–––
115
9.0
36
48
14
11
35
39
35
40
–––
170
760
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
1.2
4.0
44
25
71
14
110
21
33
V/°C Reference to 25°C, I
mΩ
mJ
nC
µA
nA
nC
ns
nH
pF
ns
V
V
S
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
I
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 16A
= 16A
= 25°C, I
= 25°C, I
= 16A, L = 1.5mH
= 5.1Ω
= V
= 50V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 50V
= 10V, See Fig. 10 „
= 0V
GS
J
, I
D
S
F
= 175°C .
D
D
D
Conditions
= 250µA
GS
Conditions
= 16A
= 16A, V
= 250µA
= 16A
= 16A„
GS
„
= 0V, T
= 0V
www.irf.com
D
GS
= 1mA
„
J
= 150°C
= 0V
G
G
S
„
+L
D
S
D
)
S
D