IRL5602STRLPBF International Rectifier, IRL5602STRLPBF Datasheet

IRL5602STRLPBF

Manufacturer Part Number

IRL5602STRLPBF

Description

MOSFET P-CH 20V 24A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRL5602SPBF.pdf (10 pages)

2.IRL5602STRLPBF.pdf (9 pages)

Specifications of IRL5602STRLPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

42 mOhm @ 12A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

24A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

44nC @ 4.5V

Input Capacitance (ciss) @ Vds

1460pF @ 15V

Power - Max

75W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

P Channel

Continuous Drain Current Id

-24A

Drain Source Voltage Vds

-20V

On Resistance Rds(on)

420mohm

Rds(on) Test Voltage Vgs

-4.5V

Rohs Compliant

Yes

Configuration

Single

Resistance Drain-source Rds (on)

42 mOhms

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

24 A

Power Dissipation

75 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

84 ns

Gate Charge Qg

29.3 nC

Minimum Operating Temperature

- 55 C

Rise Time

73 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The D

sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The D

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

Thermal Resistance

dv/dt

www.irf.com

STG

θJC

θJA

@ T

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

P-Channel

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of accommodating die

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Parameter

@ -4.5V

Typ.

300 (1.6mm from case )

–––

Pak is

HEXFET

-55 to + 175

Max.

-0.81

± 8.0

290

-24

-17

-96

-12

0.5

7.5

Power MOSFET

DS(on)

Max.

2.0

DSS

D Pak

= -24A

= 0.042Ω

= -20V

Units

W/°C

V/ns

°C

03/10/04

Related parts for IRL5602STRLPBF

IRL5602STRLPBF Summary of contents

Page 1

... Fully Avalanche Rated l Lead-Free l Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total ...

Page 3

VGS TOP -15V -12V -10V -7.0V -5.0V -4.5V -2.7V BOTTOM -2.0V 10 -2.0V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

1MHz iss 2400 rss oss ds gd 2000 C iss 1600 C oss 1200 800 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL ...

Page 6

D.U DRIVER -20V 0.01 Ω Charge 6 1000 800 600 400 15V 200 0 25 Starting ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 SEMBLY LINE "L" INT ERNATIONAL RECT IFIER F530S LOGO AS S EMBLY LOT CODE PART NUMBER ...

Page 9

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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