IRL5602STRLPBF International Rectifier, IRL5602STRLPBF Datasheet

no-image

IRL5602STRLPBF

Manufacturer Part Number
IRL5602STRLPBF
Description
MOSFET P-CH 20V 24A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRL5602SPBF.pdf (10 pages)
2.IRL5602STRLPBF.pdf (9 pages)

Specifications of IRL5602STRLPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
42 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 4.5V
Input Capacitance (ciss) @ Vds
1460pF @ 15V
Power - Max
75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
P Channel
Continuous Drain Current Id
-24A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
420mohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
42 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
24 A
Power Dissipation
75 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
84 ns
Gate Charge Qg
29.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
73 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description
l
l
l
l
l
l
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
JA
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
P-Channel
Fast Switching
Fully Avalanche Rated
@T
2
C
C
C
Pak is a surface mount power package capable of accommodating die
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
G
Typ.
2
300 (1.6mm from case )
–––
–––
Pak is
HEXFET
-55 to + 175
D
S
Max.
-0.81
± 8.0
290
-24
-17
-96
0.5
-12
7.5
75
®
R
Power MOSFET
DS(on)
V
Max.
2.0
40
DSS
I
D
D Pak
2
= -24A
= 0.042W
= -20V
Units
Units
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
1
5/11/99

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IRL5602STRLPBF Summary of contents

Page 1

... Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS DV Breakdown Voltage Temp. Coefficient /DT (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total ...

Page 3

VGS TOP -15V -12V -10V -7.0V -5.0V -4.5V -2.7V BOTTOM -2.0V 10 -2.0V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...

Page 4

1MHz iss 2400 rss oss ds gd 2000 C iss 1600 C oss 1200 800 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL ...

Page 6

D.U DRIVER -20V 0. Charge 6 1000 800 600 400 15V 200 0 25 Starting T ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com Peak Diode Recovery dv/dt Test Circuit + · · ƒ · · · · Period D = P.W. ...

Page 8

TO-263AB Package Details 10.54 (.415) 10.29 (.405) 1.40 (.055 MAX. 2 1.78 (.070) 15.49 (.610) 1.27 (.050) 14.73 (.580 1.40 (.055) 3X 1.14 (.045) 0.93 (.037) 3X 0.69 (.027) 5.08 (.200) 0.25 (.010) NOTES: 1 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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