IRLU7821PBF International Rectifier, IRLU7821PBF Datasheet - Page 3

• Manufacturer Part Number: IRLU7821PBF
• Description: MOSFET N-CH 30V 65A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU7821PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1030pF @ 15V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 75 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU7821PBF

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10000
1000
1000
100
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
10
0.1
1
10
2.0
1
0.1
TOP
BOTTOM
T = 25
J
V
GS
V DS , Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
4.0
°
C
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
1
6.0
2.5V
20µs PULSE WIDTH
Tj = 25°C
V
20µs PULSE WIDTH
DS
= 15V
T = 175
J
10
8.0
°
C
10.0
100
1000
100
10
Fig 2. Typical Output Characteristics
1
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60
TOP
BOTTOM
I
D
-40
=
65A
V DS , Drain-to-Source Voltage (V)
-20
Vs. Temperature
T
J
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
, Junction Temperature (°C)
0
1
20
2.5V
40
60
20µs PULSE WIDTH
Tj = 175°C
80
10
100 120 140 160 180
V
GS
=
10V
3
100