IRLU7821PBF International Rectifier, IRLU7821PBF Datasheet - Page 4

• Manufacturer Part Number: IRLU7821PBF
• Description: MOSFET N-CH 30V 65A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU7821PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1030pF @ 15V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 75 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU7821PBF

4
10000
1000
1000
100
0.1
100
10
10
1
0.0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 175
J
Drain-to-Source Voltage
V
SD
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
°
0.5
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C
Forward Voltage
T = 25
J
C oss
C iss
C rss
1.0
f = 1 MHZ
10
°
C
1.5
V
GS
= 0 V
2.0
100
1000
100
0.1
Fig 8. Maximum Safe Operating Area
10
6
5
4
3
2
1
0
1
Fig 6. Typical Gate Charge Vs.
0
1
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 12A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
2
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
4
V DS = 24V
V DS = 16V
10
6
www.irf.com
8
100µsec
10msec
1msec
10
100
12