IRF7703TRPBF International Rectifier, IRF7703TRPBF Datasheet - Page 4
![MOSFET P-CH 40V 6A 8-TSSOP](/photos/5/59/55908/irf7703trpbf_sml.jpg)
IRF7703TRPBF
Manufacturer Part Number
IRF7703TRPBF
Description
MOSFET P-CH 40V 6A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7703TRPBF.pdf
(9 pages)
Specifications of IRF7703TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 4.5V
Input Capacitance (ciss) @ Vds
5220pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
45 mOhms
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 6 A
Power Dissipation
1.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
41 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7703TRPBF
IRF7703TRPBFTR
IRF7703TRPBFTR
100000
10000
4
1000
100
0.1
100
10
1
0.4
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
-V
-V DS , Drain-to-Source Voltage (V)
SD
T = 150 C
0.6
Forward Voltage
J
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
Coss
°
= C gs + C gd , C ds
Crss
Ciss
0.8
10
T = 25 C
J
f = 1 MHZ
°
1.0
V
GS
SHORTED
= 0 V
1.2
100
100
0.1
10
Fig 8. Maximum Safe Operating Area
20
16
12
1
8
4
0
0
0
Fig 6. Typical Gate Charge Vs.
I =
D
Tc = 25°C
Tj = 150°C
Single Pulse
-6.0
Gate-to-Source Voltage
-V DS , Drain-toSource Voltage (V)
30
Q , Total Gate Charge (nC)
G
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
60
V
V
DS
DS
10
= 32V
= 20V
90
www.irf.com
100µsec
10msec
1msec
100
120
1000
150