IRF7703TRPBF International Rectifier, IRF7703TRPBF Datasheet - Page 9

• Manufacturer Part Number: IRF7703TRPBF
• Description: MOSFET P-CH 40V 6A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7703TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5220pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 6 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 41 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7703TRPBF; IRF7703TRPBFTR

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Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
TAC Fax: [phone]
Visit us at www.irf.com for sales contact information.05/2009
www.irf.com
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