IRFB4019PBF International Rectifier, IRFB4019PBF Datasheet

MOSFET N-CH 150V 17A TO-220AB

IRFB4019PBF

Manufacturer Part Number
IRFB4019PBF
Description
MOSFET N-CH 150V 17A TO-220AB
Manufacturer
International Rectifier
Datasheet

Specifications of IRFB4019PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
95 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4.9V @ 50µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 50V
Power - Max
80W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
80mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.9V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
17 A
Power Dissipation
80 W
Mounting Style
Through Hole
Gate Charge Qg
13 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB4019PBF
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
IRFB4019PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFB4019PBF
Quantity:
9 000
Company:
Part Number:
IRFB4019PBF
Quantity:
996
Features
• Key Parameters Optimized for Class-D Audio
• Low R
• Low Q
• Low Q
• 175°C Operating Junction Temperature for
• Can Deliver up to 200W per Channel into 8Ω Load in
Notes  through … are on page 2
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
Amplifier Applications
Ruggedness
Half-Bridge Configuration Amplifier
J
STG
Efficiency
DS
GS
D
D
θJC
θCS
θJA
@ T
@ T
@T
@T
C
C
C
C
DSON
= 25°C
= 100°C
G
RR
= 25°C
= 100°C
and Q
for Better THD and Lower EMI
for Improved Efficiency
SW
for Better THD and Improved
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current c
Power Dissipation f
Power Dissipation f
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Parameter
Parameter
GS
GS
@ 10V
@ 10V
V
R
Q
Q
R
T
J
DS
G
DS(ON)
G(int)
g
sw
max
typ.
typ.
Gate
typ.
G
typ. @ 10V
Key Parameters
Typ.
0.50
D
S
–––
–––
10lbxin (1.1Nxm)
IRFB4019PbF
-55 to + 175
Drain
Max.
150
300
±20
0.5
D
17
12
51
80
40
Max.
1.88
–––
150
175
62
5.1
2.4
80
13
D
TO-220AB
Source
S
Units
Units
W/°C
°C/W
°C
W
m:
V
A
nC
nC
G
°C
V
D
S
1
3/2/06

Related parts for IRFB4019PBF

IRFB4019PBF Summary of contents

Page 1

... Junction-to-Ambient f R θJA Notes  through … are on page 2 www.irf.com Key Parameters typ. @ 10V DS(ON) Q typ typ typ. G(int) T max Gate Parameter @ 10V GS @ 10V GS Parameter IRFB4019PbF 150 5.1 nC Ω 2.4 175 ° TO-220AB D S Drain Source Max. Units 150 V ± ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

TOP 10 BOTTOM 1 0.1 5.0V ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25V ≤ 60µs PULSE WIDTH 10.0 T ...

Page 4

175° 25°C 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 125 T ...

Page 5

125°C 0 25°C 0 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 100 Duty Cycle = Single Pulse 10 0.01 0.05 ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16 D.U 20V V GS 0.01 Ω Fig 17a. Unclamped Inductive Test Circuit V ...

Page 7

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS SEMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB packages are not ...

Page 8

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords