IRFB4019PBF International Rectifier, IRFB4019PBF Datasheet - Page 6

• Manufacturer Part Number: IRFB4019PBF
• Description: MOSFET N-CH 150V 17A TO-220AB
• Manufacturer: International Rectifier

Specifications of IRFB4019PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 95 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 50V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.9V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 80 W
• Mounting Style: Through Hole
• Gate Charge Qg: 13 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
Fig 17a. Unclamped Inductive Test Circuit

Fig 18a. Switching Time Test Circuit
Fig 19a. Gate Charge Test Circuit
‚
+
12V
-
V
GS
Same Type as D.U.T.
R G
20V
Current Regulator
V
D.U.T
V DS
.2µF
GS
Duty Factor < 0.1%
Pulse Width < 1µs
V
t p
Fig 16.
GS
50KΩ
3mA
Current Sampling Resistors
.3µF
ƒ
I AS
D.U.T
+
-
V
•
•
•
•
I
DS
G
0.01 Ω
L
SD
•
•
•
D.U.T.
I
D
D.U.T
L
15V
+
D
-
-
V
„
DS
G
V
DRIVER
DD
+
-
+
+
-
V DD
A
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
90%
Fig 17b. Unclamped Inductive Waveforms
V
10%
V
P.W.
DS
Fig 18b. Switching Time Waveforms
SD
for HEXFET
DS
GS
I
Waveform
Fig 19b Gate Charge Waveform
AS
Waveform
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
Period
t
d(on)
Body Diode Forward
Diode Recovery
Current
®
t
r
Qgd
Power MOSFETs
dv/dt
Forward Drop
di/dt
t p
D =
Qgodr
t
d(off)
Period
P.W.
V
t
(BR)DSS
f
V
V
I
SD
GS
DD
Vgs
=10V
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