IRF3315SPBF International Rectifier, IRF3315SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF3315SPBF
• Description: MOSFET N-CH 150V 21A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3315SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 21 A
• Gate Charge, Total: 95 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 94 W
• Resistance, Drain To Source On: 0.082 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 49 ns
• Time, Turn-on Delay: 9.6 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 82mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 63.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3315SPBF

100
100
10
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
4
Fig 1. Typical Output Characteristics
TOP
BOTTOM
V
V
DS
5
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
T = 25 C
J
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
6
1
°
4.5V
7
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
DS
J
T = 175 C
J
8
10
= 50V
°
°
9
100
10
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
-60 -40 -20 0
0.1
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
TOP
BOTTOM
D
21A
V
DS
T , Junction Temperature( C)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
J
, Drain-to-Source Voltage (V)
Vs. Temperature
20 40 60 80 100 120 140 160 180
1
IRF3315S/L
20µs PULSE WIDTH
T = 175 C
J
10
4.5V
°
V
°
GS
=
10V
100