IRF3315SPBF International Rectifier, IRF3315SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF3315SPBF
• Description: MOSFET N-CH 150V 21A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3315SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 21 A
• Gate Charge, Total: 95 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 94 W
• Resistance, Drain To Source On: 0.082 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 49 ns
• Time, Turn-on Delay: 9.6 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 82mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 63.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3315SPBF

IRF3315S/L
100
0.1
3000
2500
2000
1500
1000
10
500
1
0.2
0
T = 175 C
1
Fig 7. Typical Source-Drain Diode
J
Fig 5. Typical Capacitance Vs.
V
SD
V
DS
°
0.5
,Source-to-Drain Voltage (V)
Drain-to-Source Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
C oss
GS
iss
rss
oss
C rss
C iss
Forward Voltage
=
=
=
=
0V,
C
C
C
gs
gd
ds
0.8
+ C
+ C
10
f = 1MHz
gd ,
gd
T = 25 C
J
C
ds
1.1
V
°
GS
SHORTED
= 0 V
1.4
100
1000
100
10
20
16
12
1
8
4
0
1
0
T
T
Single Pulse
I =
C
J
D
Fig 8. Maximum Safe Operating Area
= 25 C
= 175 C
Fig 6. Typical Gate Charge Vs.
OPERATION IN THIS AREA LIMITED
12
V
DS
°
20
Q , Total Gate Charge (nC)
°
A
G
, Drain-to-Source Voltage (V)
Gate-to-Source Voltage
V
V
V
10
DS
DS
DS
BY R
40
= 120V
= 75V
= 30V
DS(on)
FOR TEST CIRCUIT
60
SEE FIGURE
100
10us
100us
1ms
10ms
80
13
1000
100