IRLH5030TRPBF International Rectifier, IRLH5030TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLH5030TRPBF
• Description: MOSFET N-CH 100V 13A 8VQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLH5030TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2.5V @ 150µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 5185pF @ 50V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.9 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 13 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

R
R
R
R
∆ΒV
∆V
Thermal Resistance
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
θJC
θJC
θJA
θJA
GS(th)
AS
SD
DS(on)
g
g
Q
Q
Q
Q
sw
oss
G
iss
oss
rss
rr
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
(<10s)
(Bottom)
(Top)
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy d
Avalanche Current c
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
Parameter
Junction-to-Case f
Junction-to-Case f
Junction-to-Ambient g
Junction-to-Ambient g
Parameter
Parameter
gs2
+ Q
gd
)
Parameter
Time is dominated by parasitic Inductance
Min.
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
5185
Typ.
Typ.
0.10
10.3
-5.9
–––
–––
–––
–––
–––
–––
–––
300
150
–––
–––
–––
190
7.2
7.9
4.0
1.2
7.7
94
44
22
26
20
21
72
41
41
32
Max. Units
Max. Units
Typ.
-100
–––
–––
––– mV/°C
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
400
285
9.0
9.9
2.5
1.0
20
66
48
V/°C
mΩ
µA
nA
nC
nC
nC
nC
ns
pF
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
See Fig.17 & 18
V
V
I
R
See Fig.15
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 500A/µs e
Typ.
–––
–––
–––
–––
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DS
GS
DS
DD
GS
DS
G
= 50A
= 50A
=1.8Ω
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= V
= 100V, V
= 100V, V
= 16V
= -16V
= 50V, I
= 10V, V
= 50V
= 4.5V
= 16V, V
= 50V, V
= 0V
= 50V
GS
Max.
230
50
, I
D
S
F
D
D
D
= 250µA
Conditions
D
Conditions
DS
GS
GS
= 50A, V
= 50A, V
= 150µA
= 50A
= 50A e
GS
GS
= 50A e
Max.
= 50V, I
= 0V
0.5
= 4.5V
15
35
33
= 0V
= 0V, T
D
GS
DD
= 1mA
www.irf.com
D
J
= 0V e
= 50V
= 50A
G
= 125°C
Units
mJ
A
Units
°C/W
D
S