IRLH5030TRPBF International Rectifier, IRLH5030TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRLH5030TRPBF
• Description: MOSFET N-CH 100V 13A 8VQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLH5030TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2.5V @ 150µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 5185pF @ 50V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.9 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 13 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
25
20
15
10
Fig 15a. Switching Time Test Circuit
5
0
R G
20V
V DS
2
V GS, Gate -to -Source Voltage (V)
t p
4
≤ 0.1
≤ 1
I AS
6
D.U.T
0.01 Ω
L
8
10 12 14 16 18 20
T J = 125°C
T J = 25°C
15V
DRIVER
I D = 50A
+
-
+
-
V DD
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
1000
900
800
700
600
500
400
300
200
100
90%
V
10%
V
0
I
DS
AS
GS
25
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
t p
r
75
t
100
d(off)
V
(BR)DSS
TOP
BOTTOM 50A
t
f
125
I D
12A
5.5A
150
5