IRF7240PBF International Rectifier, IRF7240PBF Datasheet

MOSFET P-CH 40V 10.5A 8-SOIC

IRF7240PBF

Manufacturer Part Number
IRF7240PBF
Description
MOSFET P-CH 40V 10.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7240PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
10.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
9250pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
-10.5 A
Gate Charge, Total
73 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
0.025 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
210 ns
Time, Turn-on Delay
52 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
-40 V
Voltage, Drain To Source
–40 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.015Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±20V
Drain Current (max)
10.5A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
l
l
l
l
l
Thermal Resistance
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
Description
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Maximum Junction-to-Ambientƒ
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
Parameter
GS
GS
@ -10V
@ -10V
G
S
S
S
V
-40V
DSS
1
2
3
4
Top View
HEXFET Power MOSFET
0.025@V
0.015@V
8
7
6
5
IRF7240PbF
-55 to + 150
R
Max.
Max.
-10.5
DS(on)
-8.6
± 20
50
D
D
D
D
-40
-43
2.5
1.6
A
20
GS
GS
max
= -4.5V
= -10V
SO-8
-10.5A
-8.4A
mW/°C
Units
Units
I
°C/W
D
°C
V
A
V
1
06/06/05

Related parts for IRF7240PBF

IRF7240PBF Summary of contents

Page 1

... Power Dissipation ƒ 25° 70°C Power Dissipationƒ Linear Derating Factor V Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambientƒ θJA www.irf.com IRF7240PbF HEXFET Power MOSFET V R DSS DS(on) -40V 0.015@V 0.025 Top View Max. @ -10V -10 -10V ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP -15V -10V -4.5V -3.7V -3.5V 100 -3.3V -3.0V BOTTOM -2. 0.1 -2.70V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

0V MHZ C iss = rss = oss = 12000 Ciss 8000 4000 Coss Crss 0 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ...

Page 6

-10.5A 0.010 0.0 4.0 8.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate ...

Page 7

Temperature ( °C ) Fig 15. Typical Vgs(th) Variance Vs. Juction Temperature www.irf.com 200 160 120 -250µ 100 125 150 ...

Page 8

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 9

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : ...

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