IRF7240PBF International Rectifier, IRF7240PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7240PBF
• Description: MOSFET P-CH 40V 10.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7240PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 9250pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -10.5 A
• Gate Charge, Total: 73 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.025 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 210 ns
• Time, Turn-on Delay: 52 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: -40 V
• Voltage, Drain To Source: –40 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.015Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 10.5A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
1000
0.01
0.01
100
100
0.1
0.1
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
1
2.5
0.1
TOP
BOTTOM
-V
-V
T = 150 C
J
DS
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
GS
3.0
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
°
1
T = 25 C
J
3.5
-2.70V
°
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
DS
10
= -25V
4.0
°
100
4.5
1000
100
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
0.1
10
1
-60 -40 -20
0.1
Fig 4. Normalized On-Resistance
I =
TOP
BOTTOM
D
-V
-10.5A
DS
T , Junction Temperature ( C)
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20 40 60 80 100 120 140 160
-2.70V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
-10V
3
100