IRF6725MTRPBF International Rectifier, IRF6725MTRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF6725MTRPBF
• Description: MOSFET N-CH 30V 28A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6725MTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 170 A
• Power Dissipation: 100 W
• Gate Charge Qg: 36 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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1000
100
180
160
140
120
100
10
80
60
40
20
1
0
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
25
T J = 150°C
T J = 25°C
T J = -40°C
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
75
100
Fig 14. Maximum Avalanche Energy vs. Drain Current
V GS = 0V
800
700
600
500
400
300
200
100
125
0
25
150
Starting T J , Junction Temperature (°C)
50
75
100
TOP
BOTTOM 22A
Fig 13. Typical Threshold Voltage vs. Junction
1000
0.01
3.0
2.5
2.0
1.5
1.0
0.5
100
0.1
10
1
-75 -50 -25
0.01
125
Fig11. Maximum Safe Operating Area
I D = 100µA
I D = 150µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
I D
2.1A
2.8A
T A = 25°C
T J = 150°C
Single Pulse
V DS , Drain-to-Source Voltage (V)
150
0.10
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
DC
Temperature
0
IRF6725MPbF
25
1.00
10msec
50
75 100 125 150
100µsec
1msec
10.00
100.00
5