irf6725m International Rectifier Corp., irf6725m Datasheet

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irf6725m

Manufacturer Part Number
irf6725m
Description
Directfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
irf6725mTR1PBF
Manufacturer:
International Rectifier
Quantity:
37 799
Company:
Part Number:
irf6725mTRPBF
Quantity:
9 000
Company:
Part Number:
irf6725mTRPBF
Quantity:
5 703
Description
The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6725MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6725MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
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l
l
l
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www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AR
DS
GS
AS
RoHS Compliant Containing No Lead and Bromide 
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible 
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
100% Rg tested
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
application
SQ
Fig 1. Typical On-Resistance vs. Gate Voltage
A
A
C
6
5
4
3
2
1
0
= 25°C
= 70°C
= 25°C
0
T J = 25°C
SX
V GS, Gate -to -Source Voltage (V)
5
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ST
10
T J = 125°C
Ãg
g
15
Parameter
I D = 28A
GS
GS
GS
MQ
@ 10V
@ 10V
@ 10V
h
20
f
MX
30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V
Q
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
36nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
C
g tot
DSS
measured with thermocouple mounted to top (Drain) of part.
5.0
4.0
3.0
2.0
1.0
0.0
MT

0
J
= 25°C, L = 0.75mH, R
11nC
Q
I D = 22A
IRF6725MTRPbF
gd
V
5
DirectFET™ Power MOSFET ‚
GS
MP
MX
Q G , Total Gate Charge (nC)
10
IRF6725MPbF
3.9nC
Q
V DS = 24V
V DS = 15V
gs2
15
Max.
170
220
190
±20
30
28
22
22
R
DS(on)
G
20
39nC
Q
= 25Ω, I
rr
25
DirectFET™ ISOMETRIC
TM
AS
packaging to achieve
21nC
Q
= 22A.
30
oss
R
35
DS(on)
Units
V
mJ
08/14/07
1.8V
V
A
A
gs(th)
40
1

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irf6725m Summary of contents

Page 1

... The IRF6725MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

... IRF6725MPbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS ...

Page 3

... Ci= τi/Ri Ci= τi/Ri 0.001 0.01 0 Rectangular Pulse Duration (sec) Š measured at θ ‰ small clip heatsink (still air) IRF6725MPbF Max. 2.8 1.8 100 270 - 150 Typ. Max. ––– 45 12.5 ––– 20 ––– ––– 1.2 1.0 – ...

Page 4

... IRF6725MPbF 1000 100 10 1 2.3V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 150° 25° -40°C 1 0.1 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics ...

Page 5

... TOP 600 BOTTOM 22A 500 400 300 200 100 100 Starting Junction Temperature (°C) IRF6725MPbF OPERATION IN THIS AREA LIMITED (on) 100µsec 1msec 10msec 25° 150°C Single Pulse 0.01 0.10 1.00 10. Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 100µ ...

Page 6

... IRF6725MPbF DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time Test Circuit 6 Id Vgs L VCC Fig 15b. Gate Charge Waveform 15V DRIVER ...

Page 7

... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G + Voltage Body Diode - Inductor Curent Ripple ≤ 5% for HEXFET G = GATE D = DRAIN S = SOURCE IRF6725MPbF P.W. Period D = Period V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Forward Drop I SD ® Power MOSFETs ...

Page 8

... IRF6725MPbF ™ DirectFET™ Part Marking 8 DIMENSIONS METRIC CODE MIN MAX MIN A 0.246 6.25 6.35 B 0.189 4.80 5.05 C 3.85 3.95 0.152 D 0.35 0.45 0.014 0.027 E 0.68 0.72 F 0.72 0.027 0.68 G 1.42 0.054 1.38 H 0.84 0.032 0.80 0.015 J 0.38 0.42 0.035 K 0.88 1.01 L 2.28 2.41 0.090 M 0.616 0.676 0.0235 R 0.020 0.080 0.0008 P 0.003 0.08 0.17 GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates " ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6725MTRPBF). For 1000 parts on 7" reel, order IRF6725MTR1PBF CODE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...

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