IRFS41N15D IRF, IRFS41N15D Datasheet

no-image

IRFS41N15D

Manufacturer Part Number
IRFS41N15D
Description
Power MOSFET
Manufacturer
IRF
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFS41N15D
Manufacturer:
IR
Quantity:
3 000
Part Number:
IRFS41N15D
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFS41N15DPBF
Manufacturer:
IR
Quantity:
24 760
Part Number:
IRFS41N15DPBF
Manufacturer:
Infineon Technologies
Quantity:
64 506
Part Number:
IRFS41N15DPBF
Manufacturer:
IR
Quantity:
50 000
Part Number:
IRFS41N15DTRLP
Manufacturer:
Infineon Technologies
Quantity:
500
Part Number:
IRFS41N15DTRLP
Manufacturer:
IR
Quantity:
800
Part Number:
IRFS41N15DTRLPBF
Manufacturer:
POWER
Quantity:
2 300
Part Number:
IRFS41N15DTRLPBF
Manufacturer:
IR
Quantity:
1 970
Part Number:
IRFS41N15DTRR
Manufacturer:
Infineon Technologies
Quantity:
256
Part Number:
IRFS41N15DTRRHR
Manufacturer:
IR
Quantity:
24 760
Notes
Typical SMPS Topologies
www.irf.com
Absolute Maximum Ratings
Applications
Benefits
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
J
STG
D
D
GS
@ T
@ T
Effective C
App. Note AN1001)
and Current
@T
@T
High frequency DC-DC converters
Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
through
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Power Dissipation
are on page 11
to Simplify Design, (See
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFB41N15D
TO-220AB
V
150V
DSS
300 (1.6mm from case )
HEXFET
-55 to + 175
10 lbf•in (1.1N•m)
IRFS41N15D
R
Max.
164
200
± 30
3.1
1.3
2.7
DS(on)
41
29
D
2
0.045
Pak
®
IRFSL41N15D
Power MOSFET
IRFB41N15D
IRFS41N15D
max
IRFSL41N15D
PD- 93804A
TO-262
Units
W/°C
V/ns
41A
°C
W
I
A
V
D
1
2/14/00

Related parts for IRFS41N15D

IRFS41N15D Summary of contents

Page 1

... HEXFET V DSS 150V TO-220AB IRFB41N15D @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) PD- 93804A IRFB41N15D IRFS41N15D IRFSL41N15D ® Power MOSFET R max I DS(on) D 0.045 41A 2 D Pak TO-262 IRFS41N15D IRFSL41N15D Max. Units 164 3.1 W 200 1.3 W/°C ± 2.7 V/ns °C 1 2/14/00 ...

Page 2

... D = 1mA D = 25A 250µ 0V 150° Conditions = 25A D = 1.0V, ƒ = 1.0MHz DS = 120V, ƒ = 1.0MHz 120V DS Max. Units 470 Max. Units 0.75 ––– °C Conditions 25A 25A www.irf.com ...

Page 3

... Fig 1. Typical Output Characteristics 1000 100 ° 175 C J ° 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRFB/IRFS/IRFSL41N15D 1000 TOP BOTTOM 100 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 25V 0.0 10 ...

Page 4

... 75V 30V DS FOR TEST CIRCUIT SEE FIGURE 100 Q , Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms ° 10ms = 25 C ° = 175 C 10 100 V , Drain-to-Source Voltage (V) DS www.irf.com 120 1000 ...

Page 5

... Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFB/IRFS/IRFSL41N15D R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1 ...

Page 6

... Fig 13b. Gate Charge Test Circuit 6 1200 1000 800 + 600 400 200 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy + TOP 10A 21A BOTTOM 25A 75 100 125 150 175 ° J Vs. Drain Current www.irf.com ...

Page 7

... Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com IRFB/IRFS/IRFSL41N15D Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. ...

Page 8

... (. (. (. (. www.irf.com ...

Page 9

... H E ATSINK & Pak Part Marking Information TIO www.irf.com IRFB/IRFS/IRFSL41N15D - B - 4.69 (.1 85) 4.20 (.1 65) 1.3 2 (.05 2) 1.2 2 (.04 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 5 .28 (. .78 (.18 8) 1 ...

Page 10

... IRFB/IRFS/IRFSL41N15D TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com ...

Page 11

... IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 www.irf.com IRFB/IRFS/IRFSL41N15D (. (. ...

Related keywords