IRFS41N15D IRF, IRFS41N15D Datasheet - Page 2

• Manufacturer Part Number: IRFS41N15D
• Description: Power MOSFET
• Manufacturer: IRF

IRFB/IRFS/IRFSL41N15D
Diode Characteristics
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
E
I
E
R
R
R
R
R
V
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
d(on)
r
d(off)
f
SM
on
S
rr
2
V
fs
AS
AR
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
JC
CS
JA
JA
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
18
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.17 –––
2520 –––
3090 –––
–––
–––
–––
–––
250
––– 0.045
–––
––– -100
–––
510
110
230
–––
–––
–––
170
1.3
72
16
14
21
35
63
25
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
164
250
100
260
5.5
1.3
1.9
25
31
52
41
V/°C
nC
µA
nA
ns
pF
µC
ns
V
V
S
Typ.
Typ.
A
V
0.50
–––
–––
–––
–––
–––
–––
Reference to 25°C, I
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
V
V
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
D
I
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
D
G
= 25A
= 25°C, I
= 25°C, I
= 25A
= 2.5
= V
= 150V, V
= 120V, V
= 50V, I
= 120V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V,
= 75V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 25A, V
= 25A
= 25A
= 250µA
= 25A
GS
GS
= 0V to 120V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
0.75
470
–––
25
20
62
40
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 0V
G
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)