IRG4PC50KD IRF, IRG4PC50KD Datasheet
IRG4PC50KD
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IRG4PC50KD Summary of contents
Page 1
... Junction-to-Ambient, typical socket mount qJA Wt Weight www.irf.com G TM ultrafast 300 (0.063 in. (1.6mm) from case) Min. — — — — — PD -91582B IRG4PC50KD Short Circuit Rated UltraFast IGBT 600V CES V = 1.84V CE(on) typ 15V 30A TO-247AC Max ...
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... IRG4PC50KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage /DT DV (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) /DT Temperature Coeff. of Threshold Voltage DV GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... T = 150 15V GE 20µs PULSE WIDTH 10 Fig Typical Transfer Characteristics IRG4PC50KD oth: D uty 50 5° °C sink riv ified ipation = 10 ° ...
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... IRG4PC50KD Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3.0 2.0 1.0 100 125 150 ° Fig Typical Collector-to-Emitter Voltage 0.001 t , Rectangular Pulse Duration (sec) ...
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... G Fig Typical Switching Losses vs. Gate Resistance www.irf.com f = 1MHz + C C SHORTED ies C oes C res 10 100 IRG4PC50KD 400V 30A 120 Q , Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 100 R = Ohm 5 ...
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... IRG4PC50KD Ohm 5 150 C ° 480V 15V Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 100 10 1 0.6 1.0 1 lta Fig Maximum Forward Voltage Drop vs. ...
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... I = 10A 600 F 300 0 100 1000 /dt Fig Typical Stored Charge vs 10000 1000 100 100 Fig Typical di IRG4PC50KD ° ° 50A 10A /µ ° ...
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... IRG4PC50KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ...
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... F 100 V www.irf.com D.U. 800V IRG4PC50KD 800V @25°C ...
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... IRG4PC50KD =20V; pulse width limited by maximum junction temperature =80%( =20V, L=10µ CES £ µ £ ...