IRG4PC50S IRF, IRG4PC50S Datasheet

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IRG4PC50S

Manufacturer Part Number
IRG4PC50S
Description
INSULATED GATE BIPOLAR TRANSISTOR
Manufacturer
IRF
Datasheet

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IRG4PC50S
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IR
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500
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FSC
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Part Number:
IRG4PC50SPBF
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International Rectifier
Quantity:
25 232
Benefits
Features
Features
Features
Features
Features
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
• Standard: Optimized for minimum saturation
• Generation 4 IGBT design provides tighter
• Industry standard TO-247AC package
Absolute Maximum Ratings
Thermal Resistance
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
parameter distribution and higher efficiency than
Generation 3
C
C
CM
LM
industry-standard Generation 3 IR IGBT's
voltage and low operating frequencies ( < 1kHz)
J
STG
CES
GE
ARV
D
D
θJC
θCS
θJA
1
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Maximum Power Dissipation
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case )
6.0 (0.21)
Typ.
0.24
–––
–––
C
E
10 lbf•in (1.1N•m)
-55 to + 150
IRG4PC50S
TO-247AC
Max.
± 20
600
140
200
140
70
41
20
78
V
@V
CE(on) typ.
Max.
V
0.64
GE
–––
–––
40
CES
= 15V, I
www.irf.com
= 600V
= 1.28V
C
Units
2/7/2000
Units
= 41A
g (oz)
°C/W
mJ
W
°C
V
A
V

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IRG4PC50S Summary of contents

Page 1

... STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight 1 IRG4PC50S C V CES V CE(on) typ 15V n-channel TO-247AC Max. 600 70 41 140 140 ± ...

Page 2

... IRG4PC50S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... Frequency (kHz) (Load Current = I of fundamental) RMS 1000 100  T = 150 15V Fig Typical Transfer Characteristics IRG4PC50S T ria lta 50V CC 5µs PULSE WIDTH ...

Page 4

... IRG4PC50S ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02  0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case ...

Page 5

... 100 0 Fig Typical Gate Charge vs.  100 -60 -40 -20 Fig Typical Switching Losses vs. IRG4PC50S = 400V = 41A 40 80 120 160 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage 5.0Ω = Ohm = 15V = 480V  ...

Page 6

... IRG4PC50S  40 5.0Ω Ohm 150 C ° 480V 15V Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6  1000 V = 20V 125 C J 100 10  SAFE OPERATING AREA 100 V CE Fig Turn-Off SOA ...

Page 7

... t=5µ IRG4PC50S 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig ...

Page 8

... IRG4PC50S Case Outline and Dimensions — TO-247AC (. (. (. (. .80 (.583 ) * 14 .20 (.559 ) (. (. (. ...

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