IRG4PC50S IRF, IRG4PC50S Datasheet - Page 4

• Manufacturer Part Number: IRG4PC50S
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: IRF

IRG4PC50S
Fig. 4 - Maximum Collector Current vs. Case
0.001
4
0.01
0.1
8 0
6 0
4 0
2 0
0.00001
0
1
2 5
0.50
0.20
0.10
0.05
0.02
0.01
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
T , C ase Tem perature (°C)
5 0
C
L IM IT E D B Y P A C K A G E
Temperature
7 5

(THERMAL RESPONSE)
0.0001
SINGLE PULSE
1 0 0
V
1 2 5
G E
t , Rectangular Pulse Duration (sec)
1
= 15 V
0.001
1 5 0
Fig. 5 - Typical Collector-to-Emitter Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-60 -40 -20

V
80 us PULSE WIDTH
0.01
GE
vs. Junction Temperature

= 15V
Notes:
1. Duty factor D = t / t
2. Peak T = P
T , Junction Temperature ( C)
J
0
J
20
DM
40
x Z
1
0.1

60
thJC
2
P
DM
80 100 120 140 160
+ T
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I =

I =

I =
C
C
C
C
t
1
20.5
t
82
41
2
°
A
A
A
1