IRG4PC50S IRF, IRG4PC50S Datasheet - Page 2

• Manufacturer Part Number: IRG4PC50S
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: IRF

IRG4PC50S
Notes:
Q
R
S
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
∆V
V
V
∆V
g
I
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
fe
E
(BR)CES
(BR)ECS
CE(ON)
GE(th)
on
off
ts
ts
ies
oes
res
g
ge
gc
2
(BR)CES
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
CC
/∆T
= 80%(V
/∆T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 5.0Ω,
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
18
17
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
T
U
1080
4100
0.72
8.27
8.99
0.75
1.28 1.36
1.62
1.28
-9.3
180
650
400
620
250
34
24
61
33
30
31
31
15
13
48
—
—
—
—
—
—
—
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
1000
±100
250
280
980
600
6.0
2.0
—
—
—
—
—
—
—
37
92
13
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
mJ
mJ
µA
nC
ns
nH
nA
ns
pF
V
V
V
S
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9, 10, 14
T
I
V
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
C
C
I
I
I
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
J
J
CC
GE
GE
GE
GE
CC
C
C
C
= 41A
= 41A, V
= 41A, V
= 25°C
= 150°C,
= 41A
= 80A
= 41A , T
= 100V, I
= 0V, I
= 0V, I
= 0V, I
= V
= V
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
CE
CE
CC
CC
C
C
J
= 250µA
= 1.0A
= 1.0mA
C
= 250µA
= 250µA
= 150°C
G
G
= 600V
= 10V, T
= 600V, T
= 480V
= 480V
= 41A
= 5.0Ω
= 5.0Ω
See Fig. 8
See Fig. 7
www.irf.com
J
J
= 25°C
V
See Fig.2, 5
= 150°C
GE
= 15V