IRF2805S IRF [International Rectifier], IRF2805S Datasheet

no-image

IRF2805S

Manufacturer Part Number
IRF2805S
Description
AUTOMOTIVE MOSFET
Manufacturer
IRF [International Rectifier]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF2805S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF2805SPBF
Manufacturer:
Infineon Technologies
Quantity:
26 844
Part Number:
IRF2805STRLPBF
Manufacturer:
IR
Quantity:
8 000
Part Number:
IRF2805STRLPBF
Manufacturer:
Infineon Technologies
Quantity:
6 202
Part Number:
IRF2805STRLPBF
Manufacturer:
IR
Quantity:
120
Part Number:
IRF2805STRRPBF
Manufacturer:
Infineon Technologies
Quantity:
248
Thermal Resistance
Absolute Maximum Ratings
HEXFET(R) is a registered trademark of International Rectifier.
Typical Applications
Features
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
I
I
I
P
V
E
E
I
E
dv/dt
T
T
R
R
www.irf.com
D
D
AR
DM
GS
AS
STG
D
AS
AR
J
JA
@ T
@ T
JC
@T
Climate Control
ABS
Electronic Braking
Windshield Wipers
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
(6 sigma)
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Single Pulse Avalanche Energy Tested ValueX
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient
Parameter
Parameter
AUTOMOTIVE MOSFET
(PCB Mounted, steady state)**
GS
GS
@ 10V
@ 10V
G
See Fig.12a, 12b, 15, 16
300 (1.6mm from case )
Typ.
–––
–––
HEXFET
-55 to + 175
IRF2805S
S
D
D
135V
Max.
1220
96V
700
200
± 20
380
2
1.3
2.0
Pak
®
R
Power MOSFET
DS(on)
Max.
V
I
0.75
IRF2805S
IRF2805L
D
40
DSS
= 135AV
IRF2805L
TO-262
= 4.7m
= 55V
PD - 94428
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
06/10/02

IRF2805S Summary of contents

Page 1

... Typ. (PCB Mounted, steady state)** PD - 94428 IRF2805S IRF2805L ® HEXFET Power MOSFET 55V DSS R = 4.7m DS(on 135AV TO-262 D Pak IRF2805L IRF2805S Max. Units 135V 96V A 700 200 W 1.3 W/°C ± 380 mJ 1220 A mJ 2.0 V/ns - 175 °C Max. Units ––– ...

Page 2

... IRF2805S/IRF2805L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100 25V 20µs PULSE WIDTH 10 4.0 5.0 6.0 7 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRF2805S/IRF2805L 1000 TOP BOTTOM 4.5V 4.5V 100 10 10 100 0.1 Fig 2. Typical Output Characteristics 3 2 175°C 2 ...

Page 4

... IRF2805S/IRF2805L 10000 0V, C iss = SHORTED 8000 C rss = oss = 6000 Ciss 4000 2000 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 175°C 100.0 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1 Source-toDrain Voltage (V) Fig 7 ...

Page 5

... Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRF2805S/IRF2805L Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms  0.001 0. Rectangular Pulse Duration (sec) ...

Page 6

... IRF2805S/IRF2805L Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D ...

Page 7

... Starting Junction Temperature (°C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com IRF2805S/IRF2805L 1.0E-05 1.0E-04 tav (sec) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T every part type ...

Page 8

... IRF2805S/IRF2805L * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent *** V = 5.0V for Logic Level and 3V Drive Devices GS Fig 17. For N-channel 8 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane ...

Page 9

... D Pak Package Outline 2 D Pak Part Marking Information www.irf.com IRF2805S/IRF2805L 9 ...

Page 10

... IRF2805S/IRF2805L TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com ...

Page 11

... DIS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRF2805S/IRF2805L (. (. (. ...

Related keywords