IRF2805S IRF [International Rectifier], IRF2805S Datasheet - Page 2

• Manufacturer Part Number: IRF2805S
• Description: AUTOMOTIVE MOSFET
• Manufacturer: IRF [International Rectifier]

Q
R
S
T
IRF2805S/IRF2805L
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
I
I
I
I
V
t
Q
t
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
DSS
on
GSS
d(on)
f
S
SM
rr
r
d(off)
V
2
fs
S
SD
D
(BR)DSS
GS(th)
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
Repetitive rating; pulse width limited by
I
Pulse width
R
T
(BR)DSS
max. junction temperature. (See fig. 11).
Starting T
SD
J
G
eff.
= 25 , I
175°C
104A, di/dt
/ T
J
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance U
= 25°C, L = 0.08mH
AS
Internal Drain Inductance
Internal Source Inductance
= 104A. (See Figure 12).
400µs; duty cycle
240A/µs, V
Parameter
Parameter
DD
V
2%.
(BR)DSS
J
= 25°C (unless otherwise specified)
,
U
V Calculated continuous current based on maximum allowable
W Limited by T
X This value determined from sample failure population. 100%
C
as C
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
oss
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
tested to this value in production.
55
91
junction temperature. Package limitation current is 75A.
–––
avalanche performance.
Intrinsic turn-on time is negligible (turn-on is dominated by L
oss
eff. is a fixed capacitance that gives the same charging time
5110 –––
1190 –––
6470 –––
1600 –––
0.06 –––
while V
–––
–––
–––
290
–––
–––
–––
–––
–––
–––
––– -200
150
120
110
210
860
3.9
4.5
80
38
52
14
68
7.5
175V
Jmax
–––
120
430
–––
–––
250
230
–––
–––
–––
–––
–––
–––
–––
200
1.3
4.0
4.7
700
DS
20
57
78
is rising from 0 to 80% V
, see Fig.12a, 12b, 15, 16 for typical repetitive
V/°C
m
nC
nC
ns
nH
ns
µA
nA
pF
A
V
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 104A
= 104A
= 25°C, I
= 25°C, I
= 2.5
= 55V, V
= 44V
= 0V
= 25V
= 0V, I
= 10V, I
= 10V, I
= 25V, I
= 44V, V
= 20V
= -20V
= 10VT
= 10V T
= 0V, V
= 0V, V
= 0V, V
= 28V
D
S
F
DS
D
D
D
DS
DS
= 250µA
GS
GS
Conditions
= 104A, V
= 104A
Conditions
DSS
= 250µA
= 104A
= 104A T
= 0V to 44V

= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
T
.
www.irf.com
D
= 1mA
GS
J
= 150°C
G
= 0VT
G
S
+L
D
D
S
S
D
)