IRF2903ZS IRF [International Rectifier], IRF2903ZS Datasheet

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IRF2903ZS

Manufacturer Part Number
IRF2903ZS
Description
HEXFET Power MOSFET
Manufacturer
IRF [International Rectifier]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
IRF2903ZS
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF2903ZS
Manufacturer:
PUISE
Quantity:
128 000
Part Number:
IRF2903ZSPBF
Manufacturer:
Infineon Technologies
Quantity:
229
Part Number:
IRF2903ZSPBF
Manufacturer:
IR
Quantity:
11 458
Part Number:
IRF2903ZSTRLP
Manufacturer:
International Rectifier
Quantity:
135
Part Number:
IRF2903ZSTRLP
Manufacturer:
Infineon Technologies
Quantity:
140
Part Number:
IRF2903ZSTRRP
Manufacturer:
Infineon Technologies
Quantity:
193
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
l
l
l
l
l
Features
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Power MOSFET utilizes the latest
k
Ã
ik
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
i
i
(Silicon Limited)
(Silicon Limited)
(Package Limited)
D
h
TO-220AB
IRF2903Z
jk
G
Gate
G
G
D
S
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
HEXFET
–––
–––
–––
D
S
10 lbf
D
IRF2903ZS
-55 to + 175
D
Drain
y
Max.
2
1020
in (1.1N
D
± 20
260
180
290
290
820
Pak
2.0
75
G
R
®
D
DS(on)
Power MOSFET
S
V
y
m)
DSS
I
Max.
D
0.51
–––
IRF2903ZS
62
40
IRF2903ZL
D
= 75A
IRF2903Z
= 2.4mΩ
PD - 96988A
= 30V
IRF2903ZL
Source
TO-262
S
Units
Units
W/°C
°C/W
G
mJ
mJ
°C
W
A
V
A
D
S
1

IRF2903ZS Summary of contents

Page 1

... HEXFET Power MOSFET 30V DSS R = 2.4mΩ DS(on 75A Pak TO-262 IRF2903ZS IRF2903ZL D S Drain Source Max. Units 260 180 75 1020 290 2.0 W/°C ± 20 290 mJ 820 See Fig.12a, 12b 175 300 (1.6mm from case ) lbf in (1 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 175°C 10 25°C 1 ...

Page 4

0V MHZ C iss = SHORTED 10000 C rss = oss = 8000 Ciss 6000 4000 Coss ...

Page 5

LIMITED BY PACKAGE 250 200 150 100 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 0.01 100 0.05 0. 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 300 TOP Single Pulse BOTTOM 1% Duty Cycle 250 75A 200 150 100 ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" sembly line position indicates "Lead - Free" TO-220AB package is not recommended ...

Page 10

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" (Dimensions are shown ...

Page 11

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 SEMBLY LINE "C" Note: "P" in ass embly line pos ition indicates "Lead-Free" OR ...

Page 12

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; ...

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