IRF2903ZS IRF [International Rectifier], IRF2903ZS Datasheet - Page 4

• Manufacturer Part Number: IRF2903ZS
• Description: HEXFET Power MOSFET
• Manufacturer: IRF [International Rectifier]

4
12000
10000
1000.0
8000
6000
4000
2000
100.0
10.0
1.0
0.1
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
0.4
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.8
T J = 25°C
Crss
Coss
Ciss
1.2
f = 1 MHZ
10
1.6
V GS = 0V
2.0
2.4
100
10000
1000
100
0.1
Fig 8. Maximum Safe Operating Area
10
20
16
12
1
8
4
0
0.1
Fig 6. Typical Gate Charge Vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 75A
LIMITED BY PACKAGE
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
40
Q G Total Gate Charge (nC)
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
80
V DS = 24V
VDS= 15V
120
1msec
10.0
www.irf.com
160
10msec
DC
100µsec
200
100.0
240