IRF6217PBF IRF [International Rectifier], IRF6217PBF Datasheet

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IRF6217PBF

Manufacturer Part Number
IRF6217PBF
Description
Manufacturer
IRF [International Rectifier]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6217PBF
Manufacturer:
PHILIPS
Quantity:
390
Thermal Resistance
l
l
l
l
l
Absolute Maximum Ratings
www.irf.com
Applications
Notes  through
Benefits
I
I
I
P
V
dv/dt
T
T
Symbol
R
R
D
D
DM
J
STG
D
GS
θJL
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
@T
Reset Switch for Active Clamp Reset
DC to DC converters
Lead-Free
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design (See
are on page 8
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
-150V
DSS
1
2
3
4
Top View
IRF6217PbF
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
2.4
8
6
5
7
-55 to + 150
R
W
Max.
0.02
DS(on)
-0.7
-0.5
-5.0
± 20
2.5
4.5
D
D
D
D
A
@V
®
GS
Power MOSFET
max
Max.
=-10V
20
50
SO-8
-0.7A
Units
Units
10/04/04
W/°C
°C/W
I
V/ns
D
°C
W
A
V
1

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IRF6217PBF Summary of contents

Page 1

... J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance Symbol Parameter R Junction-to-Drain Lead θJL R Junction-to-Ambient θJA Notes  through „ are on page 8 www.irf.com IRF6217PbF SMPS MOSFET V DSS -150V Top View @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. – ...

Page 2

... IRF6217PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... Fig 3. Typical Transfer Characteristics www.irf.com 10 TOP BOTTOM 1 0.1 ° C 0.01 0.1 100 -V Fig 2. Typical Output Characteristics 2.5 -0.70A 2.0 ° C 1.5 1.0 0.5 0.0 -60 - Fig 4. Normalized On-Resistance IRF6217PbF VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -5.0V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( -10V GS - 100 ...

Page 4

... IRF6217PbF 10000 0V, C iss = rss = oss = 1000 Ciss 100 Coss 10 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 ° 150 0.1 0.2 0.6 0.9 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF6217PbF - + ≤ 1 ≤ 0 d(off Notes: 1. Duty factor ...

Page 6

... IRF6217PbF 1.94 1.94 1.92 1.92 1.90 1.90 1.88 1. -10V 1.86 1.86 1.84 1.84 1.82 1.82 1.80 1.80 0.00 0.25 0.50 0. Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF 12V .3µ D.U. -3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform -20V ...

Page 7

... C y 0.10 [.004 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL LAS T DIGIT YEAR WW = WEEK XXXX EMBLY CODE F7101 LOT CODE PART NUMBER IRF6217PbF INCHES MILLIMETERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 ...

Page 8

... IRF6217PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ...

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