IRF6217PBF IRF [International Rectifier], IRF6217PBF Datasheet - Page 2
IRF6217PBF
Manufacturer Part Number
IRF6217PBF
Description
Manufacturer
IRF [International Rectifier]
Datasheet
1.IRF6217PBF.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF6217PBF
Manufacturer:
PHILIPS
Quantity:
390
Part Number:
IRF6217PBF
Manufacturer:
IR
Quantity:
20 000
Diode Characteristics
IRF6217PbF
Dynamic @ T
Avalanche Characteristics
Static @ T
V
∆V
R
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
I
DSS
GSS
AR
SM
d(on)
r
d(off)
f
S
rr
fs
AS
DS(on)
(BR)DSS
GS(th)
SD
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
-150
0.55
–––
–––
-3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
-0.17 ––– V/°C
–––
–––
–––
––– -250
–––
–––
150
150
–––
–––
––– -100
6.0
–––
1.6
2.8
7.2
10
51
86
12
14
16
30
15
45
–––
-5.0
100
–––
9.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.6
130
2.4
-25
2.4
4.2
-1.8
-5.0
77
µA
nA
nC
ns
nC
pF
ns
Ω
V
V
S
V
Typ.
–––
–––
Reference to 25°C, I
I
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0KHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= -0.42A
= -0.42A
= 25°C, I
= 25°C, I
= 6.2Ω
= 0V, I
= -10V, I
= V
= -150V, V
= -120V, V
= -20V
= 20V
= -50V, I
= -120V
= -10V,
= -75V
= -10V
= 0V
= -25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
DS
DS
Conditions
= -250µA
D
D
Conditions
Conditions
= -0.42A, V
= -0.42A
= -250µA
= -0.42A
= -0.42A
GS
GS
= 0V to -120V
Max.
= -1.0V, ƒ = 1.0KHz
= -120V, ƒ = 1.0KHz
-1.4
15
= 0V, T
= 0V, T
D
www.irf.com
= -1mA
GS
J
J
= 25°C
= 125°C
G
= 0V
Units
mJ
A
S
D