IRF6218S IRF [International Rectifier], IRF6218S Datasheet

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IRF6218S

Manufacturer Part Number
IRF6218S
Description
HEXFET Power MOSFET
Manufacturer
IRF [International Rectifier]
Datasheet

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l
l
l
l
www.irf.com
Applications
Notes  through
Benefits
Absolute Maximum Ratings
V
V
I
I
I
P
dv/dt
T
T
Thermal Resistance
R
R
D
D
DM
J
STG
DS
GS
D
θJC
θJA
App. Note AN1001)
and Current
@ T
@ T
Reset Switch for Active Clamp
Reset DC-DC converters
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
Fully Characterized Avalanche Voltage
@T
C
C
C
= 25°C
= 100°C Continuous Drain Current, V
= 25°C Maximum Power Dissipation
OSS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient
to Simplify Design (See
are on page 9
g
Parameter
Parameter
(PCB Mounted, steady state)
SMPS MOSFET
h
GS
GS
@ 10V
@ 10V
-150V 150m @V
V
DSS
G
gh
R
Typ.
300 (1.6mm from case )
–––
–––
D
S
DS(on)
HEXFET
-55 to + 175
Max.
-150
± 20
-110
250
-27
-19
1.6
8.2
GS
max
IRF6218S
IRF6218L
IRF6218S
= -10V
®
D
Max.
0.61
2
40
Power MOSFET
Pak
IRF6218L
-27A
TO-262
Units
Units
W/°C
°C/W
I
V/ns
D
°C
W
V
A
4/22/04
1

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IRF6218S Summary of contents

Page 1

... Mounted, steady state) IRF6218S IRF6218L ® HEXFET Power MOSFET max I DS(on -10V -27A TO-262 D Pak IRF6218L S IRF6218S Max. Units -150 V ± 20 -27 A -19 -110 250 W 1.6 W/°C 8.2 V/ns - 175 °C Max. Units 0.61 °C/W 40 ...

Page 2

... IRF6218S/L Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... Fig 2. Typical Output Characteristics 2 -27A -10V 2 175°C 1.5 1.0 0 -60 -40 -20 0 Fig 4. Normalized On-Resistance IRF6218S/L VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V -4.5V ≤ 60µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage ( 100 120 140 160 180 Junction Temperature (°C) vs ...

Page 4

... IRF6218S/L 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss C rss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000.00 100. 175°C 10. 25°C 1.00 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 Source-to-Drain Voltage (V) Fig 7 ...

Page 5

... Fig 10b. Switching Time Waveforms τ J τ J τ τ 1 τ 2 τ Ci= τi/Ri Ci= i/Ri 0.0001 0.001 Rectangular Pulse Duration (sec) IRF6218S/L R D.U. d(off τi (sec) Ri (°C/ τ 0.264 0.000285 C τ τ 0.206 0.001867 3 τ ...

Page 6

... IRF6218S/L 400 350 300 -10V 250 200 150 100 Drain Current (A) Fig 12. On-Resistance vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF Q 12V .3µ D.U. -3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit ...

Page 7

... Dimensions are shown in millimeters (inches) 2 UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9 Ã'!# 6TT H7G 9ÃPIÃXXÃ!Ã! DIÃUC Ã6TT H7G`ÃGDI ÃÅGÅ www.irf.com IRF6218S/L DIU SI6UDPI6G S 8UDAD S A$"T GPBP 6TT H7G` GPUÃ8P9 Q6SUÃIVH7 S 96U Ã ...

Page 8

... IRF6218S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information 8 IGBT 1- GATE 2- COLLECTOR 3- EMITTER www.irf.com ...

Page 9

... J Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.4/04 IRF6218S/L 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 23.90 (.941) 4.72 (.136) 4 ...

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