IRF6716MTRPBF International Rectifier, IRF6716MTRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF6716MTRPBF
• Description: MOSFET N-CH 25V 39A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6716MTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 2.4V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5150pF @ 13V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 39A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 1.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.9V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 78 W
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
™
™
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
1.38
MIN
6.25
3.85
0.35
0.68
0.68
0.80
0.38
0.88
2.28
0.616
0.020
0.08
4.80
METRIC
DIMENSIONS
1.42
1.01
MAX
6.35
5.05
3.95
0.45
0.72
0.72
0.84
0.42
2.41
0.676
0.080
0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.0235
0.0008
0.003
MIN
IMPERIAL
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.0274
0.0031
0.007
MAX
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