irf6716m International Rectifier Corp., irf6716m Datasheet

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irf6716m

Manufacturer Part Number
irf6716m
Description
Directfetpower Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
1.IRF6716M.pdf (9 pages)
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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Description
The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6716MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6716MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6716MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.

‚
ƒ
Notes:
www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AR
DS
GS
AS
RoHs Compliant Containing No Lead and Bromide 
Low Profile (<0.6 mm)
Dual Sided Cooling Compatible 
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
100% Rg tested
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
SQ
A
A
C
6
5
4
3
2
1
0
= 25°C
= 70°C
= 25°C
2
Fig 1. Typical On-Resistance vs. Gate Voltage
SX
3
T J = 25°C
V GS, Gate -to -Source Voltage (V)
4
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
5
ST
6
T J = 125°C
7
Ãg
g
8
Parameter
I D = 40A
GS
GS
GS
9
MQ
@ 10V
@ 10V
@ 10V
h
10
f
MX
„
…
†
25V max ±20V max
Q
39nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
g tot
C
DSS
measured with thermocouple mounted to top (Drain) of part.
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
MT

0
J
12nC
= 25°C, L = 0.65mH, R
Q
I D = 32A
gd
V
10
GS
DirectFET™ Power MOSFET ‚
MP
MX
Q G Total Gate Charge (nC)
IRF6716MTRPbF
V DS = 20V
V DS = 13V
5.3nC
Q
gs2
20
1.2mΩ@10V
Max.
IRF6716MPbF
180
320
330
±20
25
39
31
32
R
DS(on)
G
28nC
30
Q
= 25Ω, I
rr
DirectFET™ ISOMETRIC
TM
40
AS
packaging to achieve
27nC
Q
= 32A.
2.0mΩ@ 4.5V
oss
50
R
DS(on)
Units
V
mJ
1.9V
V
A
A
gs(th)
60
1
03/17/08

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irf6716m Summary of contents

Page 1

... The IRF6716MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P Operating Junction and Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 100 10 2. Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 150° ...

Page 5

150° 25° -40° 0.0 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 200 175 150 125 ...

Page 6

DUT 20K Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit D.U. ≤ 1 ≤ 0.1 ...

Page 7

D.U.T + ƒ • • - • + ‚ „  R • G • • SD • Fig 18. ™ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com Driver Gate Drive ...

Page 8

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 DIMENSIONS METRIC IMPERIAL CODE MIN MIN MAX MAX A 0.246 6.25 6.35 0.250 B 5.05 0.189 4.80 0.201 C 3.85 3.95 0.152 0.156 D ...

Page 9

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6716). For 1000 parts on 7" reel, order IRF6716TR1 CODE NOTE: CONTROLLING DIMENSIONS IN MM Note: For the ...

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