IRF6645TR1PBF International Rectifier, IRF6645TR1PBF Datasheet - Page 2

• Manufacturer Part Number: IRF6645TR1PBF
• Description: MOSFET N-CH 100V 5.7A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6645TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 890pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SJ
• Current, Drain: 5.7 A
• Gate Charge, Total: 14 nC
• Package Type: SJ
• Polarization: N-Channel
• Power Dissipation: 3 W
• Resistance, Drain To Source On: 28 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Turn-off Delay: 18 ns
• Time, Turn-on Delay: 9.2 ns
• Transconductance, Forward: 7.4 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.7 A
• Gate Charge Qg: 14 nC
• For Use With: IRAUDAMP5 - BOARD DEMO IRS2092S/IRF6645IRAUDAMP4 - KIT 2CH 120W HALF BRDG AUDIO AMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6645TR1PBFTR

Notes:
…
‡
IRF6645PbF
Electrical Characteristic @ T
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
Q
Q
Q
Q
G
iss
oss
rss
oss
oss
g
sw
oss
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) g
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
gs2
J
+ Q
= 25°C (unless otherwise specified)
gd
)
Min.
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
7.4
Typ.
Typ.
0.12
–––
–––
–––
–––
–––
–––
–––
890
180
870
100
–––
–––
–––
-12
3.1
0.8
4.8
5.3
5.6
7.2
1.0
9.2
5.0
5.1
28
14
18
40
31
40
Max. Units
Max. Units
-100
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
7.2
1.3
35
20
20
25
45
47
60
mV/°C
V/°C
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 15
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs c
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
GS
GS
G
= 3.4A
= 3.4A
=6.2Ω
= 25°C, I
= 25°C, I
= V
= 100V, V
= 80V, V
= 10V, I
= 50V
= 16V, V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V, V
= 0V
= 0V, V
= 0V, V
GS
, I
Conditions
Conditions
D
S
F
D
DS
DS
D
D
= 250µA
GS
GS
GS
= 3.4A, V
= 3.4A, V
= 50µA
= 5.7A i
= 3.4A
GS
= 1.0V, f=1.0MHz
= 80V, f=1.0MHz
= 0V, T
= 0V
= 10V i
= 0V
www.irf.com
D
= 1mA
GS
DD
J
G
= 125°C
= 0V i
= 50V
S
D