IRF6645 International Rectifier, IRF6645 Datasheet
IRF6645
Specifications of IRF6645
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IRF6645 Summary of contents
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... The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters ...
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... IRF6645 Electrical Characteristic @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...
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... Rectangular Pulse Duration (sec) „ T measured with thermocouple incontact with top (Drain) of part. C … measured at θ ƒ small clip heatsink (still air) IRF6645 Max. 3.0 1.4 42 270 - 150 Typ. Max. ––– 58 12.5 ––– 20 ––– ...
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... IRF6645 100 10 6.0V 1 ≤60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 10V ≤60µs PULSE WIDTH 150° 25° -40°C 1 0.1 4.0 5.0 6 Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics 10000 0V MHZ C iss = SHORTED C rss = C gd ...
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... Fig11. Maximum Safe Operating Area 100 125 150 120 TOP 100 BOTTOM 100 Starting Junction Temperature (°C) IRF6645 1000 OPERATION IN THIS AREA LIMITED (on) 100 100µsec 10 1msec 25° 150°C 10msec Single Pulse 0.1 0.1 1.0 10 Drain-toSource Voltage (V) 6.0 5.5 5 ...
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... IRF6645 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V GS 0.01 Ω Fig 16b. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time Test Circuit ...
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... Driver Gate Drive P.W. D.U.T. I Reverse Recovery „ Current - + D.U.T. V Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs P.W. Period D = Period Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% for N-Channel D D IRF6645 V =10V ...
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... IRF6645 DirectFET™ Outline Dimension, SJ Outline (Small Size Can, J-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL CODE MAX ...
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... DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6645). For 1000 parts on 7" reel, order IRF6645TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...