IRF6645 International Rectifier, IRF6645 Datasheet - Page 4
![MOSFET N-CH 100V DIRECTFET-SJ](/photos/13/92/139254/irf6614tr1pbf_sml.jpg)
IRF6645
Manufacturer Part Number
IRF6645
Description
MOSFET N-CH 100V DIRECTFET-SJ
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6645.pdf
(10 pages)
Specifications of IRF6645
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
4.9V @ 50µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
890pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric SJ
Configuration
Single Quad Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
35 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
5.1 ns
Minimum Operating Temperature
- 40 C
Rise Time
5 ns
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF6645TR1PBF
Manufacturer:
ATMEL
Quantity:
1 200
Company:
Part Number:
IRF6645TR1PBF
Manufacturer:
International Rectifier
Quantity:
1 975
Part Number:
IRF6645TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF6645
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
10000
Fig 4. Typical Output Characteristics
1000
100
0.1
100
100
10
0.1
10
10
1
1
4.0
0.1
Fig 6. Typical Transfer Characteristics
1
T J = 150°C
T J = 25°C
T J = -40°C
V DS = 10V
≤60µs PULSE WIDTH
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
5.0
6.0V
C rss
1
C iss
C oss
6.0
f = 1 MHZ
10
≤60µs PULSE WIDTH
Tj = 25°C
10
TOP
BOTTOM
7.0
VGS
15V
10V
8.0V
7.0V
6.0V
8.0
100
100
Fig 7. Normalized On-Resistance vs. Temperature
Fig 9. Typical On-Resistance vs. Drain Current
60
50
40
30
20
100
2.0
1.5
1.0
0.5
10
1
0
0.1
-60 -40 -20 0
Fig 5. Typical Output Characteristics
V GS = 7.0V
V GS = 8.0V
V GS = 10V
V GS = 15V
I D = 5.7A
V GS = 10V
10
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
I D , Drain Current (A)
1
20 40 60 80 100 120 140 160
20
6.0V
≤60µs PULSE WIDTH
Tj = 150°C
30
10
TOP
BOTTOM
www.irf.com
T A = 25°C
40
VGS
15V
10V
8.0V
7.0V
6.0V
100
50