IRF6645 International Rectifier, IRF6645 Datasheet - Page 5

• Manufacturer Part Number: IRF6645
• Description: MOSFET N-CH 100V DIRECTFET-SJ
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6645

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 890pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SJ
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 5.1 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 5 ns
• Lead Free Status / Rohs Status: No

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Fig 12. Maximum Drain Current vs. Ambient Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
100.0
10.0
1.0
0.1
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.3
25
T J = 150°C
T J = 25°C
T J = -40°C
0.4
V SD , Source-to-Drain Voltage (V)
50
T J , Ambient Temperature (°C)
0.5
0.6
75
Fig 14. Maximum Avalanche Energy vs. Drain Current
0.7
120
100
0.8
80
60
40
20
100
0
25
V GS = 0V
0.9
Starting T J , Junction Temperature (°C)
125
1.0
50
1.1
150
75
100
TOP
BOTTOM
Fig11. Maximum Safe Operating Area
1000
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
100
0.1
125
10
1
-75
1.5A
2.4A
0.1
3.4A
I D
I D = 1.0A
I D = 1.0mA
I D = 250µA
I D = 50µA
Fig 13. Typical Threshold Voltage vs.
T A = 25°C
Tj = 150°C
Single Pulse
-50
150
V DS , Drain-toSource Voltage (V)
-25
1.0
T J , Temperature ( °C )
Junction Temperature
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
25
10msec
10.0
100µsec
50
1msec
75
IRF6645
100.0
100 125
1000.0
150
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