IRF6633TR1 International Rectifier, IRF6633TR1 Datasheet

IRF6633TR1

Manufacturer Part Number

IRF6633TR1

Description

MOSFET N-CH 20V 16A DIRECTFET-MP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6633TR1.pdf (10 pages)

Specifications of IRF6633TR1

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

5.6 mOhm @ 16A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

16A

Vgs(th) (max) @ Id

2.2V @ 250µA

Gate Charge (qg) @ Vgs

17nC @ 4.5V

Input Capacitance (ciss) @ Vds

1250pF @ 10V

Power - Max

2.3W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MP

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6633TR1

Manufacturer:

Quantity:

1 985

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6633TR1PBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 10
Download datasheet (261Kb)

Description

The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-

niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 volt

bus converters including Rds(on) and gate charge to minimize losses.

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

Notes:

www.irf.com

Absolute Maximum Ratings

RoHs Compliant Containing No Lead and Bromide

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for both Sync.FET and some Control FET

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

application

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance Vs. Gate Voltage

2.0

V GS , Gate-to-Source Voltage (V)

4.0

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

6.0

Ãg

T J = 125°C

T J = 25°C

8.0

I D = 16A

Parameter

10.0

@ 10V

„

…

†

20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V

11nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

4.0nC

= 25°C, L = 0.51mH, R

I D = 13A

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

1.2nC

gs2

V DS = 16V

VDS= 10V

Max.

132

±20

DS(on)

32nC

= 25Ω, I

IRF6633

packaging to achieve the

DirectFET™ ISOMETRIC

8.8nC

= 13A.

oss

DS(on)

Units

1.8V

gs(th)

4/17/06

Related parts for IRF6633TR1

IRF6633TR1 Summary of contents

Page 1

RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized ...

Page 2

IRF6633 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D A Power Dissipation 70° 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

IRF6633 1000 100 10 1 2.5V ≤60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 150° 25° -40°C ...

Page 5

150°C 100 25° -40°C 10.0 1.0 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

IRF6633 0 1K Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit Pulse Width < 1µs Duty Factor < ...

Page 7

D.U.T + ƒ • • - • + ‚ - R • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, MP Outline (Medium Size Can, P-Designation). Please see DirectFET application note AN-1035 for all details regarding ...

Page 8

IRF6633 DirectFET™ Outline Dimension, MP Outline (Medium Size Can, P-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6633). For 1000 parts on 7" reel, order IRF6633TR1 CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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