IRF6633TR1 International Rectifier, IRF6633TR1 Datasheet - Page 4

• Manufacturer Part Number: IRF6633TR1
• Description: MOSFET N-CH 20V 16A DIRECTFET-MP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6633TR1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1250pF @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MP

IRF6633
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
10000
1000
1000
1000
100
0.1
Fig 6. Typical Transfer Characteristics
100
100
10
0.1
10
1
Fig 4. Typical Output Characteristics
1
0.1
1.5
1
T J = 150°C
T J = 25°C
T J = -40°C
2.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.5V
2.5
1
C oss
C iss
C rss
3.0
≤60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
V DS = 10V
≤60µs PULSE WIDTH
3.5
10
TOP
BOTTOM
4.0
4.5
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
100
5.0
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
2.0
1.5
1.0
0.5
20
16
12
10
1
8
4
0.1
-60 -40 -20 0
0
Fig 5. Typical Output Characteristics
Fig 9. Typical On-Resistance Vs.
T J = 25°C
I D = 16A
Drain Current and Gate Voltage
V DS , Drain-to-Source Voltage (V)
20
T J , Junction Temperature (°C)
I D , Drain Current (A)
1
20 40 60 80 100 120 140 160
40
2.5V
V GS = 10V
VGS = 4.5V
≤60µs PULSE WIDTH
Tj = 150°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
60
10
TOP
BOTTOM
www.irf.com
80
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
100