IRFB3507PBF International Rectifier, IRFB3507PBF Datasheet - Page 4

• Manufacturer Part Number: IRFB3507PBF
• Description: MOSFET N-CH 75V 97A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3507PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 97A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3540pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 97 A
• Power Dissipation: 190 W
• Mounting Style: Through Hole
• Gate Charge Qg: 88 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB3507PBF

4
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
1000
100
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
80
60
40
20
1
0
Fig 11. Typical C
0.0
25
0
10
T J = 175°C
V SD , Source-to-Drain Voltage (V)
V DS, Drain-to-Source Voltage (V)
50
0.4
T C , Case Temperature (°C)
20
75
30
0.8
T J = 25°C
OSS
100
40
Limited By Package
Stored Energy
1.2
50
125
V GS = 0V
60
1.6
150
70
175
2.0
80
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
10000
1000
0.01
1200
1000
100
0.1
800
600
400
200
10
95
90
85
80
75
70
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
20 40 60 80 100 120 140 160 180
75
DC
10msec
100
TOP
BOTTOM 58A
100
100µsec
125
1msec
150
I D
8.9A
12A
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1000
175