IRFB3507PBF International Rectifier, IRFB3507PBF Datasheet - Page 6

• Manufacturer Part Number: IRFB3507PBF
• Description: MOSFET N-CH 75V 97A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3507PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 97A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3540pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 97 A
• Power Dissipation: 190 W
• Mounting Style: Through Hole
• Gate Charge Qg: 88 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB3507PBF

6
14
12
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Fig 16. Threshold Voltage vs. Temperature
8
6
4
2
0
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
I D = 100µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
T J , Temperature ( °C )
0
25
di f /dt (A/µs)
50
75 100 125 150 175 200
I F = 39A
V R = 64V
T
T
J
J
= 25°C _____
= 125°C ----------
300
250
200
150
100
50
0
100 200 300 400 500 600 700 800 900 1000
f
di f /dt (A/µs)
I
V
T J = 25°C _____
T J = 125°C ----------
F
R
= 39A
= 64V
350
300
250
200
150
100
14
12
10
50
8
6
4
2
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
f
di f /dt (A/µs)
di f /dt (A/µs)
I F = 19A
V R = 64V
T
T
I
V
T J = 25°C _____
T J = 125°C ----------
J
J
F
R
= 25°C _____
= 125°C ----------
= 19A
= 64V
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f
f