STB80NF55L-08-1 STMicroelectronics, STB80NF55L-08-1 Datasheet

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STB80NF55L-08-1

Manufacturer Part Number
STB80NF55L-08-1
Description
MOSFET N-CH 55V 80A I2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB80NF55L-08-1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 4.5V
Input Capacitance (ciss) @ Vds
4350pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB80NF55L-08-1
Manufacturer:
FSC
Quantity:
5 000
Part Number:
STB80NF55L-08-1
Manufacturer:
ST
0
Part Number:
STB80NF55L-08-1
Manufacturer:
ST
Quantity:
20 000
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
Size
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
March 2004
STP80NF55L-08
STB80NF55L-08
STB80NF55L-08-1
TYPICAL R
LOW THRESHOLD DRIVE
LOGIC LEVEL DEVICE
HIGH CURRENT SWITCHING APPLICATION
Symbol
dv/dt (2)
E
I
V
I
I
DM
P
™”
V
V
D
D
AS
T
DGR
TOT
T
stg
DS
GS
(1)
(1)
TYPE
j
(3)
( )
strip-based process. The resulting tran-
N-CHANNEL 55V - 0.0065 - 80A - TO-220/D
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.0065
V
55 V
55 V
55 V
unique
DSS
STB80NF55L-08 - STB80NF55L-08-1
R
0.008
0.008
0.008
“Single
C
DS(on)
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
C
C
Feature
80 A
80 A
80 A
= 25°C
= 100°C
I
D
STripFET™ II POWER MOSFET
(1) Current Limited by Package
(2) I
(3) Starting T
SD
80A, di/dt 500A/µs, V
TO-220
INTERNAL SCHEMATIC DIAGRAM
j
= 25°C, I
1
STP80NF55L-08
2
D
3
= 40A, V
–55 to 175
I
2
Value
PAK
± 16
320
300
870
175
55
55
80
80
15
2
DD
DD
1 2
= 40V T
= 40V
3
PRELIMINARY DATA
2
PAK/I
j
T
D
JMAX.
2
PAK
1
2
PAK
3
W/°C
V/ns
Unit
mJ
°C
°C
W
V
V
V
A
A
A
1/9

Related parts for STB80NF55L-08-1

STB80NF55L-08-1 Summary of contents

Page 1

... STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D TYPE V DSS STP80NF55L- STB80NF55L- STB80NF55L-08 TYPICAL R (on) = 0.0065 DS LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ™” Size strip-based process. The resulting tran- sistor shows extremely high packing density for ...

Page 2

... STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( (1) Symbol ...

Page 3

... V (2) Forward On Voltage SD t Reverse Recovery Time rr Reverse Recovery Charge Q rr Reverse Recovery Current I RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area. STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1 Test Conditions V = 27V 40A 4 4. (see test circuit, Figure ...

Page 4

... STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1 TO-220 MECHANICAL DATA mm. DIM. MIN. TYP A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 16.40 L30 28.90 øP 3.75 Q 2.65 inch MAX. MIN. TYP. 4.60 0.173 0.88 0.024 1.70 0.045 0.70 0.019 15.75 0.60 10 ...

Page 6

... STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1 DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0º 6 PAK MECHANICAL DATA mm. TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 8 10.4 8.5 5.28 15.85 1.4 1.75 3.2 0.4 4º inch MIN. ...

Page 7

... STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1 TO-262 (I mm. DIM. MIN. TYP A 4.40 A1 2.40 b 0.61 b1 1.14 c 0.49 c2 1.23 D 8.95 e 2. 3.50 L2 1.27 2 PAK) MECHANICAL DATA MAX. MIN. 4.60 0.173 2.72 0.094 0.88 0.024 1.70 0.044 0.70 0.019 1.32 0.048 9.35 0.352 2.70 0.094 5.15 ...

Page 8

... STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08 PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11 ...

Page 9

... STMicroelectronics - All Rights Reserved Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1 STMicroelectronics GROUP OF COMPANIES http://www.st.com ...

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